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AlSiC

AlSiC, pronounced "alsick", is a metal matrix composite consisting of aluminium matrix with silicon carbide particles. It has high thermal conductivity (180–200 W/m K), and its thermal expansion can be adjusted to match other materials, e.g. silicon and gallium arsenide chips and various ceramics. It is chiefly used in microelectronics as substrate for power semiconductor devices and high density multi-chip modules, where it aids with removal of waste heat. Several variants exist: *AlSiC-9, containing 37 vol.% of A 356.2 aluminium alloy and 63 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches gallium arsenide, silicon, indium phosphide, alumina, aluminium nitride, silicon nitride, and Direct Bonded Copper aluminium nitride. It is also compatible with some low temperature co-fired ceramics, e.g. Ferro A6M and A6S, Heraeus CT 2000, and Kyocera GL560. Its density at 25 °C is 3.01 g/cm 3 . *AlSiC-10, containing 45 vol.% of A 356.2 aluminium alloy and 55 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches e.g. printed circuit boards, FR-4, and Duroid. Its density at 25 °C is 2.96 g/cm 3 . *AlSiC-12, containing 63 vol.% of A 356.2 aluminium alloy and 37 vol.% silicon carbide. Its thermal conductivity is 170–180 W/m K.…

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AlSiC, pronounced "alsick", is a metal matrix composite consisting of aluminium matrix with silicon carbide particles. It has high thermal conductivity (180–200 W/m K), and its thermal expansion can be adjusted to match other materials, e.g. silicon and gallium arsenide chips and various ceramics. It is chiefly used in microelectronics as substrate for power semiconductor devices and high density multi-chip modules, where it aids with removal of waste heat. Several variants exist: *AlSiC-9, containing 37 vol.% of A 356.2 aluminium alloy and 63 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches gallium arsenide, silicon, indium phosphide, alumina, aluminium nitride, silicon nitride, and Direct Bonded Copper aluminium nitride. It is also compatible with some low temperature co-fired ceramics, e.g. Ferro A6M and A6S, Heraeus CT 2000, and Kyocera GL560. Its density at 25 °C is 3.01 g/cm 3 . *AlSiC-10, containing 45 vol.% of A 356.2 aluminium alloy and 55 vol.% silicon carbide. Its thermal conductivity is 190–200 W/m K. Its thermal expansion roughly matches e.g. printed circuit boards, FR-4, and Duroid. Its density at 25 °C is 2.96 g/cm 3 . *AlSiC-12, containing 63 vol.% of A 356.2 aluminium alloy and 37 vol.% silicon carbide. Its thermal conductivity is 170–180 W/m K.…

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