Read-mostly memory
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Read-mostly memory (RMM) is a type of memory that can be read fast, but written to only slowly. Historically, the term was used to refer to different types of memory over time: In 1970, it was used by Intel and Energy Conversion Devices to refer to a new type of amorphous and crystalline nonvolatile and reprogrammable semiconductor memory (phase-change memory aka PCM/PRAM). However, it was also used to refer to reprogrammable memory (REPROM) and magnetic-core memory. The term has mostly fallen into disuse, but is sometimes used referring to electrically erasable programmable read-only (EEPROM) or flash memory today.
Read-mostly memory (RMM) is a type of memory that can be read fast, but written to only slowly. Historically, the term was used to refer to different types of memory over time: In 1970, it was used by Intel and Energy Conversion Devices to refer to a new type of amorphous and crystalline nonvolatile and reprogrammable semiconductor memory (phase-change memory aka PCM/PRAM). However, it was also used to refer to reprogrammable memory (REPROM) and magnetic-core memory. The term has mostly fallen into disuse, but is sometimes used referring to electrically erasable programmable read-only (EEPROM) or flash memory today. ==See also== Read-only memory (ROM) Read–write memory (R/W) Programmable read-only memory (PROM) Random-access memory (RAM) ==References== ==Further reading==
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